Panasonic Develops a Gallium Nitride (GaN) Power Transistor with Ultra High Breakdown Voltage over 10000V.
Publication Date: 14-DEC-07
Publication Title: JCN Newswires
Format: Online
Company: Matsushita Electric Industrial Company Ltd. Matsushita Electric Corporation of America

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Description

Osaka, Japan, Dec 13, 2007 - (JCN Newswire) - Panasonic, the leading brand by which Matsushita Electric Industrial Co., Ltd. is generally known, today announced the development of a Gallium Nitride (GaN) power transistor with the ultra high breakdown voltage over 10000V. This breakdown voltage is more than 5 times higher than previously reported highest...

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