MOS

International Private company
PO Box 303, Vannes,  F-56008, France
()33 2 97 47 83 06, http://www.mosarca.com

Primary SIC: Periodicals Publishing & Printing, Primary NAICS: Periodical Publishers
Description: Manufacturing: MOS MAGAZINE (Memoires Optiques and Systemes) publishes a magazine on multimedia technologies and optical storage technology, data storage and media

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MOS, News and Information

OTCBB-VHGI Announces LOI to Sell Certain Assets for $10 Million Cash/Stock to WNDM; With Stock Dividend to be Distributed to Shareholders in 2010.
Investment Weekly News; 11/21/2009; 926 words; ...effectiveness of a re-sale registration statement to be filed by WNDM in 2010. "VHGI will be selling Medical Office Software (MOS) Inc., Secure eHealth LLC, and Veriscrip technology to WNDM. VHGI's technology plus WNDM's core sales and development...

Researchers from National Cheng-Kung University detail new studies and findings in the area of electron devices.(Report)
Electronics Newsweekly; 11/18/2009; 693 words; ...device degradation in n-type high-voltage drain-extended MOS (DEMOS) devices stressed under high drain voltage and high...Drain Current and On-Resistance Degradation in Drain Extended MOS Transistors. IEEE Transactions on Electron Devices, 2009...

Stage Stores Reports October Sales.
Telecommunications Weekly; 11/18/2009; 744 words; ...5.6 ) (13.6 ) 113 115 October (0.1 ) (8.4 ) 101 99 3rd Quarter (5.4 ) (10.3 ) 325 334 Year-To-Date (9 Mos) (8.4 ) (5.6 ) 1,000 1,060 Andy Hall, President and Chief Executive Officer, commented, "We are pleased with October...

New electronics study findings have been published by A.S. Medinavazquez and colleagues.
Electronics Newsweekly; 11/18/2009; 570 words; According to a study from Mexico, "The aim of this article is to probe the advantages that the Multi-Input Floating Gate MOS (MIFGMOS) transistor has versus the conventional MOSFET transistor in order to design analogue circuits with low-voltage...

Data from Kyung-Hee University provide new insights into physics.
Electronics Newsweekly; 11/18/2009; 634 words; "We fabricated metal-oxide-semiconductor (MOS) structures containing Cr nanocrystals (NCs) as a charge trapping layer and investigated their memory characteristics. Symmetric...

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