Gates France S.A.R.L.

Patent No. 7,636,005 Issued on Dec. 22, Assigned to International Rectifier for Semiconductor Device Active Clamp (French Inventor)
US Fed News Service, Including US State News; 12/23/2009; 484 words; ...Nadd, Lourmarin, France, has developed...inventor was issued U.S. Patent No. 7...released by the U.S. Patent &...clamping voltage at a gate terminal of a first...node and source and gate terminals of the...bool.html&r=1&f=G&l=50&co1...

Dai echoes crowd concerns; Young's alarm at Euro attendance.(Sport)
Western Mail (Cardiff, Wales); 12/18/2009; 960 words; ...Their average gate this season to date...But I think it's going to be a number...stadium. "That's probably a few seasons...more. "There's also the fact that...shouldn't go out to France with a lot of confidence...Blues: B Blair; L Halfpenny, T Shanklin, J Roberts, R Mustoe; ...

ROG ROARS TO REDS' RESCUE; Out half kicks all the points to keep Euro dream alive.(Sport)
The Daily Mail (London, England); 12/12/2009; 1281 words; ...Vivalda. With the gates left open at the...stepped Howlett's meek attempt at...conversion. McGahan's men steadied themselves...be key but Mele's effort slipped to...consolation back to France, where the sides...Howlett, K Earls, L Mafi, D Hurley; R O'Gara, T O...

Applied Materials' High-k/Metal Gate Technology Selected by STMicroelectronics for 28nm Chip Production.
Business Wire; 12/8/2009; 831 words; ...high-k/metal gate (HKMG) technology...devices. Applied's state-of-the...gate layers in ST's next-generation...facility in Crolles, France. HKMG is an emerging...continuation of Moore's Law, enabling faster...requirements," said Jo[R]l Hartmann, Silicon...

Patent No. 7,622,387 Issued on Nov. 24, Assigned to Freescale Semiconductor for Gate Electrode Silicidation Process (French, Belgian Inventors)
US Fed News Service, Including US State News; 11/25/2009; 436 words; ...Froment of Crolles, France, Vidya Kaushik...have developed a gate electrode silicidation...were issued U.S. Patent No. 7...released by the U.S. Patent &...fully-silicided gate electrode is formed...bool.html&r=1&f=G&l=50&co1...