FET Engineering Inc.

American Semiconductor Awarded AFRL Contract to Develop Ultra Low Power CMOS.
Journal of Engineering; 11/18/2009; 1027 words; ...American Semiconductor, Inc. has been selected by...Multiple Independent Gate FET) transistor. The novel...American Semiconductor, Inc. is a complete silicon...American Semiconductor, Inc., Technology, Semiconductor, Manufacturing, Engineering, Defense, Contracts...

Research reports on electron devices from University of California provide new insights.(Report)
Journal of Technology; 11/17/2009; 797 words; ...performance of the T-FET-based inverter is compared...consumption for the T-FET-based inverter with...and p-Type Tunnel-FET Devices for Low-Power...amp; Computational Engineering, Santa Barbara, CA 93106...Electronics Engineers Inc., 445 Hoes Lane, Piscataway...

American Semiconductor Announces Multi-Project Wafers for 180nm Flexfet CMOS.
Electronics Newsweekly; 11/4/2009; 880 words; ...American Semiconductor, Inc. announces a Multi...Multiple Independent Gate FET (MIGFET) CMOS technology...American Semiconductor, Inc is a complete silicon...American Semiconductor, Inc., Technology, Semiconductor, Manufacturing, Engineering, Aerospace, Defense...

Studies from Purdue University add new findings in the area of electron devices.
Nanotechnology Weekly; 10/26/2009; 894 words; ...to-Band Tunneling Ballistic Nanowire FET: Circuit-Compatible Device Modeling...of Electrical & Computational Engineering, West Lafayette, IN 47907, USA. Publisher...Institute Electrical Electronics Engineers Inc., 445 Hoes Lane, Piscataway, NJ 08855...

Studies from Korea University provide new data on nanotechnology.(Report)
Nanotechnology Weekly; 10/12/2009; 688 words; ...of an omega-gated single ZnO nanowire FET. These gold nanoparticles were utilized...Korea University, Dept. of Electrical Engineering, Seoul 136701, South Korea. Publisher...Institute Electrical Electronics Engineers Inc., 445 Hoes Lane, Piscataway, NJ 08855...