Publication: JCN Newswires
Publication Date: 13-DEC-07
Delivery: Immediate Online Access
Author:
Company: NEC Electronics Corp.

Article Excerpt
Tokyo, Japan, Dec 13, 2007 - (Jiji Press) - NEC Corporation and NEC Electronics Corporation have developed a new Silica-Carbon Composite (SCC) film capable of blocking Cu-atom diffusion into the dielectric films of LSI interconnects. Use of the SCC film establishes an ultimate full-low-k (FLK) Cu interconnect structure that realizes a reduction in active power consumption in LSI interconnects. The successful development of this FLK Cu interconnect can be attributed to extensive research and development on molecular nanotechnology manipulating the molecular structure and novel plasma-enhanced deposition technology.

The new low-k barrier dielectric SCC film has been developed based on molecular nanotechnology, which has a composite structure of unsaturated C=C molecular bonds and the conventional silica backbone structure to prevent Cu diffusion into the interlayer dielectric (ILD) films. The dielectric constant (k) was decreased to 35% that of conventional barrier dielectrics.

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