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New findings from L. Geng and co-authors describe advances in electron devices.

Publication: Electronics Newsweekly
Publication Date: 07-OCT-09
Format: Online
Delivery: Immediate Online Access

Article Excerpt
"First-principle-based calculations are given to explain the Schottky barrier height (SBH) modifications of nickel silicide/silicon contacts by dopant atoms. Dopant atoms, including B, Al, In, Mg, P, As, Sb, and S, are placed near the NiSi2/Si interface, and a systematic study of their effects on the band structure is...



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