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Reports from National Chung-Hsing University advance knowledge in quantum electronics.

Publication: Electronics Newsweekly
Publication Date: 09-SEP-09
Format: Online
Delivery: Immediate Online Access

Article Excerpt
According to recent research from Taichung, Taiwan, "High-performance InGaN-based 380 nm UV LEDs are fabricated by using a heavily Mg-doped GaN insertion layer (HD-IL) technique. Based on the transmission electronmicroscopy, etch pit density, and cathodoluminescence results, the HD-IL technique can substantially reduce the defect density of GaN layer."

"The...

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