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New findings from National University describe advances in electron devices.

Publication: Electronics Newsweekly
Publication Date: 26-AUG-09
Format: Online
Delivery: Immediate Online Access

Article Excerpt
According to recent research from Singapore, Singapore, "Negative bias temperature instability (NBTI) characteristics of p-channel field-effect transistors (p-FETs) with diamond-like carbon (DLC) liner stressor having ultrahigh compressive stress (similar to 5 GPa) are investigated for the first time. Ultrafast measurement was employed for NBTI study."

"Power law slopes ranging...

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