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SEM technology sees below 1 nm.

Publication: Test & Measurement World
Publication Date: 01-OCT-08 		Format: Online
Delivery: Immediate Online Access

Article Excerpt
By Ann R. Thryft, Contributing Technical Editor

As semiconductor process geometries shrink to the 32-nm node and below, obtaining clear images and data of critical IC structures is becoming a lot tougher using traditional SEMs (scanning electron microscopes) for surface inspection. Scientists in process-development labs and engineers at logic and memory manufacturers are struggling to quickly see complex 3-D surfaces, as well as materials interfaces and profiles. They also need to see all of this from multiple angles and at resolutions below 1 nm without increasing the electron-beam voltage.

To address these problems, FEI has begun...

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